Electron transport in quantum well heterotransistors

Authors

DOI:

https://doi.org/10.30888/2663-5712.2020-06-06-137

Keywords:

 electron transport, scattering mechanisms; alloying potential; relaxation times; submicron heterostructural transistors; quantum wells

Abstract

The paper presents an analysis of electron transport processes in quantum wells of submicron heterostructural transistors. Techniques for modeling processes in nanoheterostructures have been developed, considering specific quantum effects and scattering

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References

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Published

2020-12-30

How to Cite

Москалюк, В., Тимофеев, В., & Куликов, К. (2020). Electron transport in quantum well heterotransistors. SWorldJournal, 6(06-06), 16–25. https://doi.org/10.30888/2663-5712.2020-06-06-137

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Articles